Datasheet Details
| Part number | MJ423 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.84 KB |
| Description | NPN Transistor |
| Datasheet | MJ423-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJ423.
| Part number | MJ423 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.84 KB |
| Description | NPN Transistor |
| Datasheet | MJ423-INCHANGE.pdf |
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·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min.) ·DC Current Gain- : hFE= 30-90@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER UNIT VALUE VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ423 | Power Transistors | ON |
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MJ423 | 10 Amp NPN Silicon Power Transistors | Micro Commercial Components |
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MJ423 | SILICON POWER TRANSISTOR | SavantIC |
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