Inchange Semiconductor MJ4502
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.MJ4502 Specifications
- Package : TO-204-3
- Polarity : PNP
- Current Rating : -30A
- Max Collector Current : 30A
- Terminals : 2
- Collector Base Voltage : 100V
- Collector Emitter Voltage : 90V
- Emitter Base Voltage : 4V
- Collector Emitter Saturation Voltage : 800mV
- Gain Bandwidth : 2MHz
- Max Power Dissipation : 200W
- Voltage Rating DC : -100V
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | MJ4502 |
|---|---|
| Datasheet | MJ4502 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE= 25-100@IC= -7.5A●Excellent Safe Operating Area
●Complement to the NPN MJ802
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -30 A IB Base Current-Continuous -7.5 A PC Collector Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W MJ4502 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJ4502ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Col...