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MJ4502 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·High DC Current Gain- : hFE= 25-100@IC= -7.5A ·Excellent Safe Operating Area ·Complement to the NPN MJ802 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -30 A IB Base Current-Continuous -7.5 A PC Collector Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W MJ4502 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJ4502 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 -90 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7.5A;

IB= -0.75A -0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -7.5A;

MJ4502 Distributor