MJ900 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage-.
MJ900 datasheet by Inchange Semiconductor.
| Part number | MJ900 |
|---|---|
| Datasheet | MJ900-INCHANGE.pdf |
| File Size | 203.82 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| MJ900 | (MJ900 / MJ901) Complementary Power Transistors | Motorola Semiconductor | |
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MJ900 | (MJ900 / MJ901) Complementary Power Darlingtons | ST Microelectronics |
| MJ900 | (MJ900 / MJ901) COMPLEMENTARY POWER DARLINGTONS | Comset Semiconductors |