Datasheet Details
| Part number | MJ900 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.82 KB |
| Description | PNP Transistor |
| Download | MJ900 Download (PDF) |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | MJ900 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.82 KB |
| Description | PNP Transistor |
| Download | MJ900 Download (PDF) |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE (sat)= -2.0V(Max.)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -8 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.1 A 90 W -65~+200 ℃ Tstg Storage Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W MJ900 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademarkrk isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ900 | (MJ900 / MJ901) Complementary Power Transistors | Motorola Semiconductor |
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MJ900 | (MJ900 / MJ901) Complementary Power Darlingtons | ST Microelectronics |
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MJ900 | (MJ900 / MJ901) COMPLEMENTARY POWER DARLINGTONS | Comset Semiconductors |
| Part Number | Description |
|---|---|
| MJ901 | PNP Transistor |