Inchange Semiconductor MJ900
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJ900 |
|---|---|
| Datasheet | MJ900 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.)●High DC Current Gain- : hFE= 1000(Min.)@IC= -3A
●Low Collector Saturation Voltage- : VCE (sat)= -2.0V(Max.)@ IC= -3A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as output devices in complementary general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -8 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.1 A 90 W -65~+200 ℃ Tstg Storage Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W MJ900 isc website： 1 isc & iscsemi is registered trademarkrk isc Silicon PNP Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise s...