MJ900 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage-.
MJ900 is PNP Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| MJ900 | (MJ900 / MJ901) Complementary Power Transistors | |
STMicroelectronics |
MJ900 | (MJ900 / MJ901) Complementary Power Darlingtons |
| MJ900 | (MJ900 / MJ901) COMPLEMENTARY POWER DARLINGTONS |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage-.