MJB13007 Datasheet | Inchange Semiconductor

isc Silicon NPN Power Transistor DESCRIPTION - Collector- Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) - Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A - Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection...