MJB2955 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) - High DC Current Gain- : hFE= 20-100@IC= -4A - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | MJB2955 |
|---|---|
| Description | PNP Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 183.24 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BDT88 | Inchange Semiconductor | Silicon PNP Power Transistor |
| KD333 | Tesla Elektronicke | Transistor |
| C828 | SEMTECH | NPN Silicon Transistor |