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MJB3055 Datasheet

Manufacturer: Inchange Semiconductor
MJB3055 datasheet preview

Datasheet Details

Part number MJB3055
Datasheet MJB3055-INCHANGE.pdf
File Size 210.07 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
MJB3055 page 2

MJB3055 Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.

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