MJB3055 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) - High DC Current Gain- : hFE= 20-100@IC= 4A - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | MJB3055 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 210.07 KB |
Related Datasheets
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|---|---|---|
| BDT88 | Inchange Semiconductor | Silicon PNP Power Transistor |
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| C828 | SEMTECH | NPN Silicon Transistor |