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MJB3055 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon NPN Power Transistor MJB3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.