Inchange Semiconductor MJD31C
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJD31C |
|---|---|
| Datasheet | MJD31C Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain -hFE = 25(Min)@ IC= 1A●Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min)
●Complement to Type MJD32C
●DPAK for Surface Mount
APPLICATIONS
●Minimum Lot-to-Lot variations for robust device performance and reliable operationAPPLICATIONS
●Designed for use in general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature 100 V 100 V 5 V 3 A 5 A 1 A 15 W 1.56 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.3 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD31C isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Powe...
