Inchange Semiconductor MJD44H11
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJD44H11 |
|---|---|
| Datasheet | MJD44H11 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A●Fast Switching Speeds
●Complement to Type MJD45H11
●DPAK for Surface Mount
APPLICATIONS
●Minimum Lot-to-Lot variations for robust device performance and reliable operationAPPLICATIONS
●Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation PC @TC=25℃ Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 16 A 20 W 1.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD44H11 isc website： 1 isc & iscsemi is regi...
