Inchange Semiconductor MJD50
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJD50 |
|---|---|
| Datasheet | MJD50 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain -hFE = 30~150@ IC= 0.3A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)
●DPAK for Surface Mount
APPLICATIONS
●Minimum Lot-to-Lot variations for robust device performance and reliable operationAPPLICATIONS
●Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICM Collector Current-Peak 2.0 A IB Base Current Collector Power Dissipation TC=25℃ PD Collector Power Dissipation Ta=25℃ Tj Junction Temperature 0.6 A 15 W 1.56 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 8.33 80 UNIT ℃/W ℃/W MJD50 isc website： 1 isc & iscsemi is registered trademark isc Silic...