Download MJE13070 Datasheet PDF
Inchange Semiconductor
MJE13070
MJE13070 is Silicon NPN Power Transistors manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 - Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for high-voltage, high-speed, power switching in inductive circuits, where fall time is critical.They are particularly suited for line-operated switchmode applications such as switching regulators , inverters , DC-DC converter, motor controls, solenoid drive and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage MJE13071 VCEO Collector-Emitter Voltage MJE13071 VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -65~150 ℃ MJE13070/13071...