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MJE13071 - Silicon NPN Power Transistors

Download the MJE13071 datasheet PDF. This datasheet also covers the MJE13070 variant, as both devices belong to the same silicon npn power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-volt

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Note: The manufacturer provides a single datasheet file (MJE13070-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 · Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed, power switching in inductive circuits, where fall time is critical.They are particularly suited for line-operated switchmode applications such as switching regulators , inverters , DC-DC converter, motor controls, solenoid drive and deflection circuits.