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MJE13071 Datasheet PDF

Inchange Semiconductor MJE13071

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. MJE13071
Datasheet MJE13071 Download
Manufacturer
Inchange Semiconductor
Description Silicon NPN Power Transistors
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MJE13071 datasheet page 1 preview

DESCRIPTION

●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071
● Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for high-voltage, high-speed, power switching in inductive circuits, where fall time is critical.They are particularly suited for line-operated switchmode applications such as switching regulators , inverters , DC-DC converter, motor controls, solenoid drive and deflection circuits.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage MJE13070 650 V MJE13071 750 VCEO Collector-Emitter Voltage MJE13070 400 V MJE13071 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJE13070/13071 THERMAL C...
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