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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071
· Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for high-voltage, high-speed, power switching in
inductive circuits, where fall time is critical.They are particularly suited for line-operated switchmode applications such as switching regulators , inverters , DC-DC converter, motor controls, solenoid drive and deflection circuits.