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MJE15028 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High Current Gain-Bandwidth Product- : fT= 30MHz(Min)@ IC= 0.5A ·DC current gain - : hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A ·Complement to Type MJE15029 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJE15028 APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 2 W 50 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.com 1 ℃/W isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJE15028 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 1A ;

VCE= 2V ICBO Collector Cutoff Current VCB= 120V;

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