MJE2801T Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) - High DC Current Gain- : hFE= 25-100@IC= 3A - Complement to Type MJE2901T - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | MJE2801T |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 205.38 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BDT88 | Inchange Semiconductor | Silicon PNP Power Transistor |
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| C828 | SEMTECH | NPN Silicon Transistor |