MJE2801T
MJE2801T is NPN Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min)
- High DC Current Gain-
: hFE= 25-100@IC= 3A
- plement to Type MJE2901T
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as an output device in plementary audio amplifiers up to 35 watts music power per...
