Datasheet Details
| Part number | MJE2801T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.38 KB |
| Description | NPN Transistor |
| Datasheet | MJE2801T-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJE2801T.
| Part number | MJE2801T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.38 KB |
| Description | NPN Transistor |
| Datasheet | MJE2801T-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 25-100@IC= 3A ·Complement to Type MJE2901T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
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