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MJE2901T - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) High DC Current Gain- : hFE= 25-100@IC= -3A Complement to Type MJE2801T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complem

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isc Silicon PNP Power Transistor MJE2901T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 25-100@IC= -3A ·Complement to Type MJE2801T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel.