Datasheet4U Logo Datasheet4U.com

MJE5171 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min)- MJE5170 = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 ·Low Saturation Voltage ·Complement to the NPN MJE5180/5181/5182 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJE5170/5171/5172 APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage MJE5170 -120 MJE5171 -140 V MJE5172 -160 VCEO Collector-Emitter Voltage MJE5170 -120 MJE5171 -140 V MJE5172 -160 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 65 W 2 150 ℃ Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth j-c Thermal Resistance, Junction to Case 1.92 Rth j-a Thermal Resistance, Junction to Ambient 62.5 isc Website:www.iscsemi.com 1 ℃ UNIT ℃/W ℃/W isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJE5170/5171/5172 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5170 MJE5171 IC= -30mA ;IB= 0 MJE5172 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;

IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -6A;

MJE5171 Distributor & Price

Compare MJE5171 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.