Datasheet Details
| Part number | MJE5180 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.31 KB |
| Description | NPN Transistor |
| Datasheet | MJE5180-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | MJE5180 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.31 KB |
| Description | NPN Transistor |
| Datasheet | MJE5180-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 ·Low Saturation Voltage ·Complement to Type MJE5170/5171/5172 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJE5180/5181/5182 APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage MJE5180 120 MJE5181 140 V MJE5182 160 VCEO Collector-Emitter Voltage MJE5180 120 MJE5181 140 V MJE5182 160 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 65 W 2 150 ℃ Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth j-c Thermal Resistance, Junction to Case 1.92 Rth j-a Thermal Resistance, Junction to Ambient 62.5 isc Website：www.iscsemi.com 1 ℃ UNIT ℃/W ℃/W isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJE5180/5181/5182 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5180 MJE5181 IC= 30mA ;IB= 0 MJE5182 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 6A;
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