Inchange Semiconductor MJE521
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJE521 |
|---|---|
| Datasheet | MJE521 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 40 V(Min)●DC Current Gain- : hFE = 40(Min) @ IC= 1A
●Complement to Type MJE371
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in general−purpose amplifier and switching circuits applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.12 ℃/W isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emi...