MJE5742H Overview
Description
Collector-Emitter Breakdown Voltage : VCEO= 400V(Min) - Low Collector-Emitter Saturation Voltage - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | MJE5742H |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 253.01 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MJE5742 | onsemi | NPN Silicon Power Darlington Transistor |
| MJE5742 | Motorola Semiconductor | POWER DARLINGTON TRANSISTORS |
| MJE5740 | onsemi | NPN Silicon Power Darlington Transistor |
| MJE5741 | Motorola Semiconductor | POWER DARLINGTON TRANSISTORS |
| MJE5740 | Motorola Semiconductor | POWER DARLINGTON TRANSISTORS |