Datasheet4U Logo Datasheet4U.com

MJL3281A - Silicon NPN Power Transistor

General Description

Low Harmonic Distortion High Safe Operation Area 1 A/100 V @ 1 sec High fT 30 MHz （TYP） Complement to Type MJL1302A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJL3281A 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
MJL3281A NPN Power Transistor ON Semiconductor
MJL3281 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
MJL0281A Complementary NPN-PNP Power Bipolar Transistors ON Semiconductor
MJL0302A Complementary NPN-PNP Power Bipolar Transistors ON Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
MJL21193 PNP Transistor
MJL21194 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Low Harmonic Distortion ·High Safe Operation Area — 1 A/100 V @ 1 sec ·High fT — 30 MHz （TYP） ·Complement to Type MJL1302A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VCEX Collector-Emitter Voltage-1.