Inchange Semiconductor MMBR571L
Silicon NPN RF Transistor
| Part No. | MMBR571L |
|---|---|
| Datasheet | MMBR571L Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise●High Current-Gain Bandwidth Product fT = 8.0 GHz TYP. @ IC= 50 mA
●High Gain GNF = 16.5 dB TYP. @ IC= 10mA, f = 0.5 GHz
APPLICATIONS
●Designed for low noise , wide dynamic range front-end amplifiers and low-noise VCO’S.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 3V 80 mA 0.33 W 150 ℃ -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR571LELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 10 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA ; IC= 0 20 3 V V ICBO Collector Cutoff Current VCB= 8...
