Inchange Semiconductor MMBR941L
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MMBR941L |
|---|---|
| Datasheet | MMBR941L Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise●High Current-Gain Bandwidth Product
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in high gain , low noise small-signal amplifiers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 50 mA 0.25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR941LELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 10 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 20 V IEBO Emitter Cutoff Current VEB= 1V; IC= 0 0.1 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA...
