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MMIS70R900PTH - N-Channel MOSFET

Features

  • With TO-251(IPAK) packaging.
  • Low power loss.
  • High speed switching.
  • Low on-resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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    Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·DC – DC Converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed PD Total Dissipation Tch Max.
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