Inchange Semiconductor MTP2N50
N-Channel MOSFET
| Part No. | MTP2N50 |
|---|---|
| Datasheet | MTP2N50 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With low gate drive requirements●Easy to drive
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Switching applications●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=100℃ 2 IDM Drain Current-Single Pulsed 10 PD Total Dissipation 75 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.36 62.5 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MTP2N50
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 500 VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.