Inchange Semiconductor MUR1560CT
Ultrafast Rectifier
FEATURES
●Guarding for over voltage protection●Dual rectifier construction,positive center tap
●Metal of silicon rectifier,majority carrier conduction
●Low forward voltage,high efficiency
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●Power switching circuits
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Per Leg Total device Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) TJ Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MUR1560CT VALUE 600 15 110 -55~150 -55~150 UNIT V A A ℃ ℃ MAX UNIT 2 ℃/WELECTRICAL CHARACTERISTICS
(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instanta...