The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc N-Channel MOSFET Transistor
·FEATURES ·With To-263(D2PAK) package ·Ultra low on-resistance ·Fast Switching Speed ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
INCHANGE Semiconductor
NDB710A
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
42
IDM
Drain Current-Single Pulsed
168
PD
Total Dissipation
150
Tch
Max.