Inchange Semiconductor NJD2873
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | NJD2873 |
|---|---|
| Datasheet | NJD2873 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA)●DC Current Gain -hFE = 120(Min)@ IC= 0.5A
●High Current-Gain—Bandwidth Product
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high-gain audio amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Total Power Dissipation PC @ TC=25℃ Collector Power Dissipation Ta=25℃ TJ Junction Temperature 2 A 3 A 0.4 A 15 W 1.68 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS Rth j-c Thermal Resistance, Junction to Case 10 ℃/W Rth j-a Thermal Ambient Resistance,Junction to 89.3 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor NJD2873ELECTRICAL CHARACTERISTICS
TC=25℃ unless other...