Datasheet Details
| Part number | NJW0302G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.32 KB |
| Description | PNP Power Transistor |
| Datasheet | NJW0302G-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | NJW0302G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.32 KB |
| Description | PNP Power Transistor |
| Datasheet | NJW0302G-INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·Good Linearity of hFE ·plement to Type NJW0281G ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ NJW0302G isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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NJW0302G | Complementary PNP Power Bipolar Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
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