Datasheet Details
| Part number | NJW3281G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.64 KB |
| Description | NPN Transistor |
| Datasheet | NJW3281G-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | NJW3281G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.64 KB |
| Description | NPN Transistor |
| Datasheet | NJW3281G-INCHANGE.pdf |
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·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 250 VCEO Collector-Emitter Voltage 250 VCEX Collector-Emitter Voltage VEB= 5V 250 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 30 IB Base Current-Continuous 1.6 PT Total Power Dissipation @ TC=25℃ 200 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W INCHANGE Semiconductor NJW3281G isc website：.iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors NJW3281G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 DC Current Gain hFE-5 DC Current Gain CONDITIONS IC= 100mA;
IB= 0 IC= 8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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NJW3281G | NPN Silicon Power Bipolar Transistors | ON Semiconductor |
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