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NTE388 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor NTE388.

General Description

·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICP Collector Current-Pulse 30 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 33 W 0.26 -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor NTE388 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;

IB= 800mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A;

IB= 3.2A VBE(on) Base-Emitter On Voltage IC= 8A;

NTE388 Distributor