NTHL040N65S3F - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-247 packaging.
Low RDS(on).

NTHL040N65S3F n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	NTHL040N65S3F
Manufacturer	Inchange Semiconductor
File Size	262.15 KB
Description	N-Channel MOSFET
Datasheet	NTHL040N65S3F Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NTHL040N65S3F	N-Channel Power MOSFET	ON Semiconductor
NTHL040N65S3HF	N-Channel Power MOSFET	ON Semiconductor
NTHL040N120M3S	SiC MOSFET	ON Semiconductor
NTHL041N60S5H	N-Channel Power MOSFET	onsemi
NTHL020N090SC1	900V SiC MOSFET	ON Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor NTHL040N65S3F ·FEATURES ·With TO-247 packaging ·Low RDS(on) <40mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Telecom / Server Power Supplies ·Industrial Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous@Tc=25℃ 65 IDM Drain Current-Single Pulsed 162 PD Total Dissipation 446 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.28 UNIT ℃/W isc website：www.iscsemi.