NTHL040N65S3F - N-Channel MOSFET

Datasheet Summary

Features

With TO-247 packaging.
Low RDS(on).

INCHANGE

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Datasheet Details

Part number	NTHL040N65S3F
Manufacturer	INCHANGE
File Size	262.15 KB
Description	N-Channel MOSFET
Datasheet	NTHL040N65S3F Datasheet
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isc N-Channel MOSFET Transistor NTHL040N65S3F ·FEATURES ·With TO-247 packaging ·Low RDS(on) <40mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Telecom / Server Power Supplies ·Industrial Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous@Tc=25℃ 65 IDM Drain Current-Single Pulsed 162 PD Total Dissipation 446 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.28 UNIT ℃/W isc website：www.iscsemi.

Published: Oct 7, 2020 |