Datasheet Details
| Part number | PMBT3906 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.09 KB |
| Description | PNP Transistor |
| Datasheet | PMBT3906-INCHANGE.pdf |
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Overview: isc Silicon PNP Transistor PMBT3906.
| Part number | PMBT3906 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.09 KB |
| Description | PNP Transistor |
| Datasheet | PMBT3906-INCHANGE.pdf |
|
|
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·PNP switching transistor in a SOT23 plastic package ·NPN complement:PMBT3904 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for telephony and professional communication equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -100 mA ICM Peak Collector Current PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature -200 mA 0.25 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Transistor INCHANGE Semiconductor PMBT3906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT IEBO Emitter Cutoff Current VEB= -5V;
IC= 0 -100 nA ICBO Collector Cutoff Current VCB= -40V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
PMBT3906 | PNP Transistor | nexperia |
 |
PMBT3906 | PNP switching transistor | Philips |
 |
PMBT3906M | 200mA PNP switching transistor | NXP Semiconductors |
|
PMBT3906MB | 200mA PNP switching transistor | nexperia |
 |
PMBT3906VS | 200 MA PNP/PNP Switching Transistor | NXP |
| Part Number | Description |
|---|---|
| PMBT3904 | NPN Transistor |