Inchange Semiconductor PMD1601K
Silicon NPN Darlingtion Power Transistor
| Part No. | PMD1601K |
|---|---|
| Datasheet | PMD1601K Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Darlingtion Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC current gain●Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min)
●Complement to type PMD1701K
APPLICATIONS
●Designed for general purpose amplifier and low frequency switching applicationsABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 60 60 5.0 20 40 0.5 180 150 -65~200 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.97 UNIT ℃/W isc Website： Datasheet pdf - INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1601K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 60 V V(BR)CER Collector-...