Inchange Semiconductor PMD1701K
Silicon PNP Darlingtion Power Transistor
| Part No. | PMD1701K |
|---|---|
| Datasheet | PMD1701K Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Darlingtion Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC current gain●Collector-Emitter Breakdown VoltageV(BR)CEO= -60V(Min)
●Complement to type PMD1601K
APPLICATIONS
●Designed for general purpose amplifier and low frequency switching applicationsABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -60 -60 -5.0 -20 -40 -0.5 180 150 -65~200 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.97 UNIT ℃/W isc Website： Datasheet pdf - INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD1701K MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -60 V V(BR)CER C...