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PSMN130-200D - N-Channel MOSFET

Key Features

  • With To-252(DPAK) package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Brand Logo Part Number Description Manufacturer
NXP Logo PSMN130-200D N-Channel MOSFET NXP

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Isc N-Channel MOSFET Transistor PSMN130-200D ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 80 PD Total Dissipation @TC=25℃ 150 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.