Datasheet Details
| Part number | Q6016NH4 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.31 KB |
| Description | Thyristor |
| Datasheet | Q6016NH4-INCHANGE.pdf |
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Overview: isc Thyristors Q6016NH4.
| Part number | Q6016NH4 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.31 KB |
| Description | Thyristor |
| Datasheet | Q6016NH4-INCHANGE.pdf |
|
|
|
·With TO-263( D2PAK ) packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RSM) ITSM PG(AV) Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 16 A 200 167 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage IT=12A IGT Gate-trigger current VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base Ⅰ VD =12V;RL=20Ω Ⅱ Ⅲ VD =12V;RL=20Ω Half cycle MIN MAX UNIT 0.05 0.5 mA 2 2.0 V 35 35 mA 35 1.5 V 1.2 ℃/W isc website：.iscsemi.
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