High Power Handling capacity
High Collector-Base Voltage-
: VCBO= 1200V(Min)
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Base driver for High voltage transistor modules
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
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isc Silicon NPN Power Transistor
QM5HG-24
DESCRIPTION ·High Power Handling capacity ·High Collector-Base Voltage-
: VCBO= 1200V(Min) ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Base driver for High voltage transistor modules
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1200
V
VCEX
Collector-Emitter Voltage
1200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
100
W
-40~150 ℃
Tstg
Storage Temperature Range
-40~150 ℃
isc website：www.iscsemi.
QM5HG-24 Datasheet
