R6020ENX - N-Channel MOSFET

Inchange Semiconductor

Key Features

Drain-source on-resistance: RDS(on) ≤ 0.196Ω@10V.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

R6020ENX n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	R6020ENX
Manufacturer	Inchange Semiconductor
File Size	217.19 KB
Description	N-Channel MOSFET
Datasheet	R6020ENX Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
R6020ENX	Power MOSFET	ROHM
R6020ENJ	Power MOSFET	ROHM
R6020ENZ	Power MOSFET	ROHM
R6020ENZ1	Power MOSFET	ROHM
R6020422	Fast Recovery Rectifier	Powerex Power Semiconductors

Other Datasheets by Inchange Semiconductor

Part Number	Description
R6020ENJ	N-Channel MOSFET
R6020ENZ	N-Channel MOSFET
R6020ENZ1	N-Channel MOSFET
R6020KNJ	N-Channel MOSFET
R6020KNX	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.196Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.84 UNIT V V A A W ℃ ℃ UNIT ℃/W isc website：www.iscsemi.