R6530ENX - N-Channel MOSFET

Description

purpose applications.

Features

Drain Current.
ID= 30A@ TC=25℃.
Drain Source Voltage- : VDSS=650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	R6530ENX
Manufacturer	Inchange Semiconductor
File Size	247.84 KB
Description	N-Channel MOSFET
Datasheet	R6530ENX Datasheet
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isc N-Channel MOSFET Transistor R6530ENX FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 86 W TJ Max.

Published: Mar 1, 2021 |