Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

R6530ENX Datasheet

Manufacturer: Inchange Semiconductor
R6530ENX datasheet preview

Datasheet Details

Part number R6530ENX
Datasheet R6530ENX-INCHANGE.pdf
File Size 247.84 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6530ENX page 2

R6530ENX Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 86 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6530ENX Key Features

  • Drain Current -ID= 30A@ TC=25℃ -Drain Source Voltage

R6530ENX from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
ROHM Logo R6530ENX Power MOSFET ROHM
ROHM Logo R6530ENZ Power MOSFET ROHM
ROHM Logo R6530ENZ1 Power MOSFET ROHM
ROHM Logo R6530ENZ4 Power MOSFET ROHM
ROHM Logo R6530KNX Power MOSFET ROHM
Inchange Semiconductor logo - Manufacturer

More Datasheets from Inchange Semiconductor

See all Inchange Semiconductor datasheets

Part Number Description
R6530ENZ N-Channel MOSFET
R6530ENZ1 N-Channel MOSFET
R6530KNX N-Channel MOSFET
R6530KNX1 N-Channel MOSFET
R6530KNZ N-Channel MOSFET
R6530KNZ1 N-Channel MOSFET
R6535ENZ N-Channel MOSFET
R6535ENZ1 N-Channel MOSFET
R6535KNZ N-Channel MOSFET
R6535KNZ1 N-Channel MOSFET

R6530ENX Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts