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R6530ENZ Datasheet

Manufacturer: Inchange Semiconductor
R6530ENZ datasheet preview

Datasheet Details

Part number R6530ENZ
Datasheet R6530ENZ-INCHANGE.pdf
File Size 261.31 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6530ENZ page 2

R6530ENZ Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 86 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6530ENZ Key Features

  • Drain Current -ID= 30A@ TC=25℃ -Drain Source Voltage

R6530ENZ from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ROHM Logo R6530ENZ Power MOSFET ROHM
ROHM Logo R6530ENZ1 Power MOSFET ROHM
ROHM Logo R6530ENZ4 Power MOSFET ROHM
ROHM Logo R6530ENX Power MOSFET ROHM
ROHM Logo R6530KNX Power MOSFET ROHM
Inchange Semiconductor logo - Manufacturer

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