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R6530ENZ1 Datasheet

Manufacturer: Inchange Semiconductor
R6530ENZ1 datasheet preview

Datasheet Details

Part number R6530ENZ1
Datasheet R6530ENZ1-INCHANGE.pdf
File Size 298.98 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6530ENZ1 page 2

R6530ENZ1 Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 305 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6530ENZ1 Key Features

  • Drain Current -ID= 30A@ TC=25℃ -Drain Source Voltage

R6530ENZ1 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ROHM Logo R6530ENZ1 Power MOSFET ROHM
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