R8008ANJ - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	R8008ANJ
Manufacturer	INCHANGE
File Size	250.48 KB
Description	N-Channel MOSFET
Datasheet	R8008ANJ Datasheet
Additional preview pages of the R8008ANJ datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 195 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resis

Features

Drain Current.
ID= 8A@ TC=25℃.
Drain Source Voltage- : VDSS=800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.03Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

R8008ANJ - Power MOSFET (ROHM)
R8008ANJFRG - Power MOSFET (ROHM)
R8008ANX - Power MOSFET (Rohm)
R8001CND - Power MOSFET (ROHM)
R8002ANJ - Power MOSFET (ROHM)
R8002ANJFRG - Power MOSFET (ROHM)
R8002ANX - Power MOSFET (Rohm)
R8002CND - Power MOSFET (ROHM)

Other Datasheets by INCHANGE

R8008ANX - N-Channel MOSFET
R8002ANJ - N-Channel MOSFET
R8002ANX - N-Channel MOSFET
R8005ANJ - N-Channel MOSFET
R8005ANX - N-Channel MOSFET
R8010ANX - N-Channel MOSFET

Published: Mar 1, 2021 |