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R8010ANX

Manufacturer: Inchange Semiconductor

R8010ANX datasheet by Inchange Semiconductor.

R8010ANX datasheet preview

R8010ANX Datasheet Details

Part number R8010ANX
Datasheet R8010ANX-INCHANGE.pdf
File Size 247.43 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R8010ANX page 2

R8010ANX Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R8010ANX Key Features

  • Drain Current -ID= 10A@ TC=25℃ -Drain Source Voltage

R8010ANX from other manufacturers

View R8010ANX datasheet index

Brand Logo Part Number Description Other Manufacturers
ROHM Logo R8010ANX Power MOSFET ROHM
Inchange Semiconductor logo - Manufacturer

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