Datasheet Details
| Part number | RCJ200N20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 249.87 KB |
| Description | N-Channel MOSFET |
| Download | RCJ200N20 Download (PDF) |
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| Part number | RCJ200N20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 249.87 KB |
| Description | N-Channel MOSFET |
| Download | RCJ200N20 Download (PDF) |
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|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 106 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.17 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor RCJ200N20 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor RCJ200N20.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
RCJ200N20 | Power MOSFET | ROHM |
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