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RD3G600GN - N-Channel MOSFET

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INCHANGE

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RD3G600GN N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – RD3G600GN

Datasheet Details

Part number	RD3G600GN
Manufacturer	INCHANGE
File Size	260.50 KB
Description	N-Channel MOSFET
Datasheet	RD3G600GN Datasheet
Additional preview pages of the RD3G600GN datasheet.

Product details

Description

purpose applications.

Features

Drain Current.
ID= 60A@ TC=25℃.
Drain Source Voltage- : VDSS= 40V(Min).
Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Mar 15, 2021 |