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RD3G600GN

Manufacturer: Inchange Semiconductor
RD3G600GN datasheet preview

Datasheet Details

Part number RD3G600GN
Datasheet RD3G600GN-INCHANGE.pdf
File Size 260.50 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
RD3G600GN page 2

RD3G600GN Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 120 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

RD3G600GN Key Features

  • Drain Current -ID= 60A@ TC=25℃ -Drain Source Voltage

RD3G600GN from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ROHM Logo RD3G600GN Power MOSFET ROHM
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