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RD3G600GN

RD3G600GN is N-Channel MOSFET manufactured by Inchange Semiconductor.
RD3G600GN datasheet preview

RD3G600GN Datasheet

Part number RD3G600GN
Download RD3G600GN Datasheet PDF
File Size 260.50 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
RD3G600GN page 2

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ROHM Logo ROHM RD3G600GN Power MOSFET

All RD3G600GN datasheets

RD3G600GN Description

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 120 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

RD3G600GN Key Features

  • Drain Current -ID= 60A@ TC=25℃ -Drain Source Voltage
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