Part RD3P200SN
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 260.35 KB
Inchange Semiconductor

RD3P200SN Overview

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 20 W TJ Max.

Key Features

  • Drain Current –ID= 20A@ TC=25℃
  • Drain Source Voltage- : VDSS= 100V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 46mΩ(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation