RD3P200SN - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	RD3P200SN
Manufacturer	INCHANGE
File Size	260.35 KB
Description	N-Channel MOSFET
Datasheet	RD3P200SN Datasheet
Additional preview pages of the RD3P200SN datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 20 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resis

Features

Drain Current.
ID= 20A@ TC=25℃.
Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 46mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

RD3P200SN - Power MOSFET (ROHM)
RD3P050SN - Nch 100V 5A Power MOSFET (ROHM)
RD3P050SNFRA - Power MOSFET (ROHM)
RD3P100SN - Power MOSFET (ROHM)
RD3P130SP - Power MOSFET (ROHM)
RD3P175SN - Power MOSFET (ROHM)
RD3.0E - Zener diode (Excel Semiconductor)
RD3.0E - SILICON ZENER DIODES (EIC)

Other Datasheets by INCHANGE

RD3P050SN - N-Channel MOSFET
RD3P100SN - N-Channel MOSFET
RD3P130SP - P-Channel MOSFET
RD3P175SN - N-Channel MOSFET
RD3G400GN - N-Channel MOSFET
RD3G500GN - N-Channel MOSFET

Published: Mar 15, 2021 |