Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

RD3T050CN Datasheet

Manufacturer: Inchange Semiconductor
RD3T050CN datasheet preview

Datasheet Details

Part number RD3T050CN
Datasheet RD3T050CN-INCHANGE.pdf
File Size 260.77 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
RD3T050CN page 2

RD3T050CN Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 20 A PD Total Dissipation @TC=25℃ 29 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

RD3T050CN Key Features

  • Drain Current -ID= 5A@ TC=25℃ -Drain Source Voltage

RD3T050CN from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
ROHM Logo RD3T050CN Power MOSFET ROHM
Inchange Semiconductor logo - Manufacturer

More Datasheets from Inchange Semiconductor

See all Inchange Semiconductor datasheets

Part Number Description
RD3T075CN N-Channel MOSFET
RD3T100CN N-Channel MOSFET
RD3G400GN N-Channel MOSFET
RD3G500GN N-Channel MOSFET
RD3G600GN N-Channel MOSFET
RD3H045SP P-Channel MOSFET
RD3H080SP P-Channel MOSFET
RD3H160SP P-Channel MOSFET
RD3H200SN N-Channel MOSFET
RD3L050SN N-Channel MOSFET

RD3T050CN Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts