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RJ1G12BGN Datasheet

Manufacturer: Inchange Semiconductor
RJ1G12BGN datasheet preview

Datasheet Details

Part number RJ1G12BGN
Datasheet RJ1G12BGN-INCHANGE.pdf
File Size 249.54 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
RJ1G12BGN page 2

RJ1G12BGN Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 240 A PD Total Dissipation @TC=25℃ 178 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

RJ1G12BGN Key Features

  • Drain Current -ID= 120A@ TC=25℃ -Drain Source Voltage

RJ1G12BGN from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ROHM Logo RJ1G12BGN Power MOSFET ROHM
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