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Ultrafast Rectifier
INCHANGE Semiconductor
RURP3060
FEATURES ·Guarding for over voltage protection ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Rectifier in switch mode supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
PD
Maximum power dissipation
VALUE UNIT
600
V
30
A
150
A
100
W
TJ
Junction Temperature
-40~175 ℃
Tstg
Storage Temperature Range
RURP3060 Datasheet
