Datasheet Details
| Part number | S2530A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.02 KB |
| Description | NPN Transistor |
| Datasheet | S2530A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | S2530A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.02 KB |
| Description | NPN Transistor |
| Datasheet | S2530A-INCHANGE.pdf |
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·High Voltage-VCEX= 450V(Min.) ·Collector Current- IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.25 ℃/W S2530A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;
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