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S6015L - Thyristor

General Description

With TO-220 packaging High heat dissipation and durability Thermowatt construction for low thermal Glass passivated junctions and center gate fire for greater parameter uniformity and stability Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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isc Thyristors INCHANGE Semiconductor S6015L DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) 50HZ 60HZ 15 A 188 225 A PG(AV) Average gate power dissipation Tp=8.3ms 0.